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High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT

High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT

MOQ: 5pcs
Price: Negotiable
Standard Packaging: PE bag+carton
Delivery Period: 5-10days
Payment Method: L/C, T/T
Supply Capacity: 100000 pcs per month
Detail Information
Place of Origin
China
Brand Name
JUYI
Model Number
JY21L
Product Name:
Advanced Floating Channel Driver For N-Channel Power MOSFET And IGBT
Supply Range:
5.5 V-20 V
Sink Current Capability:
450mA/850mA
Fully Operational:
+150V
Compatibility:
3.3V Logic Compatible
Highlight:

Gate Driver IC JY21L

,

MOSFET Gate Driver IC

,

N Channel MOSFET Driver IC

Product Description

JY21L


High and Low side driver

General Description

The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. Propagation delays are matched to simplify use in high frequency applications. Get more details please click here.

Features

● 3.3V logic compatible
● Fully operational to +150V
● Floating channel designed for bootstrap operation
● Gate drive supply range from 5.5V to 20V
● Output Source/Sink current capability 450mA/850mA
● Independent Logic input to accommodate all topologies
● -5V negative Vs ability
● Matched propagation delay for both channels

Applications

● Power MOSFET or IGBT driver
● Small and medium-power motor driver

Packages And Application Circuit

High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT 0

Pin Description

High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT 1

Functional Block Diagram

High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT 2

products
PRODUCTS DETAILS
High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT
MOQ: 5pcs
Price: Negotiable
Standard Packaging: PE bag+carton
Delivery Period: 5-10days
Payment Method: L/C, T/T
Supply Capacity: 100000 pcs per month
Detail Information
Place of Origin
China
Brand Name
JUYI
Model Number
JY21L
Product Name:
Advanced Floating Channel Driver For N-Channel Power MOSFET And IGBT
Supply Range:
5.5 V-20 V
Sink Current Capability:
450mA/850mA
Fully Operational:
+150V
Compatibility:
3.3V Logic Compatible
Minimum Order Quantity:
5pcs
Price:
Negotiable
Packaging Details:
PE bag+carton
Delivery Time:
5-10days
Payment Terms:
L/C, T/T
Supply Ability:
100000 pcs per month
Highlight

Gate Driver IC JY21L

,

MOSFET Gate Driver IC

,

N Channel MOSFET Driver IC

Product Description

JY21L


High and Low side driver

General Description

The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. Propagation delays are matched to simplify use in high frequency applications. Get more details please click here.

Features

● 3.3V logic compatible
● Fully operational to +150V
● Floating channel designed for bootstrap operation
● Gate drive supply range from 5.5V to 20V
● Output Source/Sink current capability 450mA/850mA
● Independent Logic input to accommodate all topologies
● -5V negative Vs ability
● Matched propagation delay for both channels

Applications

● Power MOSFET or IGBT driver
● Small and medium-power motor driver

Packages And Application Circuit

High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT 0

Pin Description

High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT 1

Functional Block Diagram

High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT 2

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