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High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching

High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching

MOQ: 1 set
Price: Negotiable
Standard Packaging: PE bag+ carton
Delivery Period: 5-10 days
Payment Method: T/T,L/C,Paypal
Supply Capacity: 1000sets/day
Detail Information
Place of Origin
China
Brand Name
JUYI
Model Number
JY4N8M
Drain-Source Voltage:
40V
Gate-Source Voltage:
±20V
Pulsed Drain Current:
350A
Maximum Power Dissipation:
80W
Model Number:
JY4N8M
Reverse Body Recovery:
Yes
Highlight:

High Side BLDC Motor Driver IC

,

BLDC Motor Driver IC chip

,

brushless dc motor controller ic

Product Description

JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver

 

 

GENERAL DESCRIPTION
The JY4N8M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on‐resistance with low gate charge. These features combine
to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.


FEATURES
● 40V/80A, RDS(ON) ≤6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation


APPLICATIONS
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
 

High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching 0

High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching 1

High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching 2

 

DOWNLOAD JY4N8M USER MANUAL

High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching 3JY4N8M.pdf

products
PRODUCTS DETAILS
High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching
MOQ: 1 set
Price: Negotiable
Standard Packaging: PE bag+ carton
Delivery Period: 5-10 days
Payment Method: T/T,L/C,Paypal
Supply Capacity: 1000sets/day
Detail Information
Place of Origin
China
Brand Name
JUYI
Model Number
JY4N8M
Drain-Source Voltage:
40V
Gate-Source Voltage:
±20V
Pulsed Drain Current:
350A
Maximum Power Dissipation:
80W
Model Number:
JY4N8M
Reverse Body Recovery:
Yes
Minimum Order Quantity:
1 set
Price:
Negotiable
Packaging Details:
PE bag+ carton
Delivery Time:
5-10 days
Payment Terms:
T/T,L/C,Paypal
Supply Ability:
1000sets/day
Highlight

High Side BLDC Motor Driver IC

,

BLDC Motor Driver IC chip

,

brushless dc motor controller ic

Product Description

JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver

 

 

GENERAL DESCRIPTION
The JY4N8M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on‐resistance with low gate charge. These features combine
to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.


FEATURES
● 40V/80A, RDS(ON) ≤6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation


APPLICATIONS
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
 

High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching 0

High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching 1

High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching 2

 

DOWNLOAD JY4N8M USER MANUAL

High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching 3JY4N8M.pdf

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