|
| MOQ: | 1 set |
| Price: | Negotiable |
| Standard Packaging: | PE bag+ carton |
| Delivery Period: | 5-10 days |
| Payment Method: | T/T,L/C,Paypal |
| Supply Capacity: | 1000sets/day |
JY14M N Channel Enhancement Mode Power MOSFET for BLDC motor driver
GENERAL DESCRIPTION
The JY14M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.
FEATURES
● 40V/200A, RDS(ON) =2.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Limit | Unit | |
| VDS | Drain-Source Voltage | 40 | V | |
| VGS | Gate-Source Voltage | ± 20 | V | |
| ID | Continuous Drain Current |
Tc=25ºC | 200 | A |
| Tc=100ºC | 130 | |||
| IDM | Pulsed Drain Current | 720 | A | |
| PD | Maximum Power Dissipation | 210 | W | |
| TJ TSTG | Operating Junction and Storage Temperature Range |
-55 to +175 | ºC | |
| RθJC | Thermal Resistance-Junction to Case | 0.65 | ºC/W | |
| RθJA | Thermal Resistance-Junction to Ambient | 62 |
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage |
VGS=0V,IDS=250uA | 40 | V | ||
| IDSS | Zero Gate Voltage Drain Current |
VDS=100V,VGS=0V | 1 | uA | ||
| IGSS | Gate-Body Leakage Current |
VGS=± 20V,VDS=0V | ± 100 | nA | ||
| VGS(th) | Gate Threshold Voltage |
VDS= VGS, IDS=250uA | 2.0 | 3.0 | 4.0 | V |
| RDS(ON) | Drain-Source On-state Resistance |
VGS=10V,IDS=60A | 2.5 | mΩ | ||
| gFS | Forward Transconductance |
VDS=20V, IDS=60A | 100 | S |
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Drain-Source Diode Characteristics | ||||||
| VSD | Diode Forward Voltage |
VGS=0V,ISD=100A | 1.2 | V | ||
| Trr | Reverse Recovery Time | ISD=100A di/dt=100A/us |
38 | ns | ||
| Qrr | Reverse Recovery Charge | 58 | nC | |||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V, f=1MHZ |
1.2 | Ω | ||
| Td(on) | Turn-on Delay Time | VDS=20V, RG=6Ω, IDS =100A, VGS=10V, |
34 | ns | ||
| Tr | Turn-on Rise Time | 22 | ||||
| Td(off) | Turn-off Delay Time | 48 | ||||
| Tf | Turn-off Fall Time | 60 | ||||
| CISS | Input Capacitance | VGS=0V, VDS=20V, f=1.0MHz |
5714 | pF | ||
| COSS | Output Capacitance | 1460 | ||||
| CRSS | Reverse Transfer Capacitance |
600 | ||||
| Qg | Total Gate Charge | VDS=30V,ID=100A, VGS=10V |
160 | nC | ||
| Qgs | Gate-Source Charge | 32 | ||||
| Qgd | Gate-Drain Charge | 58 |
DOWNLOAD JY14M USER MANUAL
Video
Video
Video
|
|
| MOQ: | 1 set |
| Price: | Negotiable |
| Standard Packaging: | PE bag+ carton |
| Delivery Period: | 5-10 days |
| Payment Method: | T/T,L/C,Paypal |
| Supply Capacity: | 1000sets/day |
JY14M N Channel Enhancement Mode Power MOSFET for BLDC motor driver
GENERAL DESCRIPTION
The JY14M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.
FEATURES
● 40V/200A, RDS(ON) =2.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Limit | Unit | |
| VDS | Drain-Source Voltage | 40 | V | |
| VGS | Gate-Source Voltage | ± 20 | V | |
| ID | Continuous Drain Current |
Tc=25ºC | 200 | A |
| Tc=100ºC | 130 | |||
| IDM | Pulsed Drain Current | 720 | A | |
| PD | Maximum Power Dissipation | 210 | W | |
| TJ TSTG | Operating Junction and Storage Temperature Range |
-55 to +175 | ºC | |
| RθJC | Thermal Resistance-Junction to Case | 0.65 | ºC/W | |
| RθJA | Thermal Resistance-Junction to Ambient | 62 |
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage |
VGS=0V,IDS=250uA | 40 | V | ||
| IDSS | Zero Gate Voltage Drain Current |
VDS=100V,VGS=0V | 1 | uA | ||
| IGSS | Gate-Body Leakage Current |
VGS=± 20V,VDS=0V | ± 100 | nA | ||
| VGS(th) | Gate Threshold Voltage |
VDS= VGS, IDS=250uA | 2.0 | 3.0 | 4.0 | V |
| RDS(ON) | Drain-Source On-state Resistance |
VGS=10V,IDS=60A | 2.5 | mΩ | ||
| gFS | Forward Transconductance |
VDS=20V, IDS=60A | 100 | S |
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Drain-Source Diode Characteristics | ||||||
| VSD | Diode Forward Voltage |
VGS=0V,ISD=100A | 1.2 | V | ||
| Trr | Reverse Recovery Time | ISD=100A di/dt=100A/us |
38 | ns | ||
| Qrr | Reverse Recovery Charge | 58 | nC | |||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V, f=1MHZ |
1.2 | Ω | ||
| Td(on) | Turn-on Delay Time | VDS=20V, RG=6Ω, IDS =100A, VGS=10V, |
34 | ns | ||
| Tr | Turn-on Rise Time | 22 | ||||
| Td(off) | Turn-off Delay Time | 48 | ||||
| Tf | Turn-off Fall Time | 60 | ||||
| CISS | Input Capacitance | VGS=0V, VDS=20V, f=1.0MHz |
5714 | pF | ||
| COSS | Output Capacitance | 1460 | ||||
| CRSS | Reverse Transfer Capacitance |
600 | ||||
| Qg | Total Gate Charge | VDS=30V,ID=100A, VGS=10V |
160 | nC | ||
| Qgs | Gate-Source Charge | 32 | ||||
| Qgd | Gate-Drain Charge | 58 |
DOWNLOAD JY14M USER MANUAL
